Strong suppression of In desorption from InGaN QW by barrier growth

0501493 - FZÚ 2019 JP eng A - Abstract
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Dominec, Filip - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by barrier growth.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 131-132
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : quantum well * InGaN * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)

The aim of this work is to elucidate how different growth mode and composition of barriers can influence the QW properties and their PL and to find optimal QW capping process, to suppress the In desorption from QWs and to maintain the QW PL efficiency. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without deterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.

Permanent Link: http://hdl.handle.net/11104/0293516