Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

0484810 - ÚFE 2019 RIV DE eng J - Journal Article
Yatskiv, Roman - Tiagulskyi, Stanislav - Grym, Jan - Černohorský, Ondřej
Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods.
Physica Status Solidi A. Roč. 215, č. 2 (2018), č. článku 1700592. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA15-17044S
Institutional support: RVO:67985882
Keywords : Rectifying ZnO homojunctions * Photoluminescence * N-type nanorods
OECD category: Electrical and electronic engineering
Impact factor: 1.606, year: 2018

Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p-n junction is formed between a p-type nanostructured seed layer deposited by sol-gel method on phosphorus doped Si substrates and an array of n-type nanorods grown by chemical bath deposition. The p-type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low-temperature photoluminescence spectra. The p-n junction shows a high value of rectification ratio. Charge transport through the p-n junction is discussed in terms of non-ideal interface
Permanent Link: http://hdl.handle.net/11104/0279944