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Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films
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SYSNO ASEP 0481233 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films Author(s) Dragounová, Kateřina (FZU-D) ORCID
Ižák, Tibor (FZU-D) RID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Potůček, Z. (CZ)
Bryknar, Z. (CZ)
Potocký, Štěpán (FZU-D) RID, ORCIDNumber of authors 6 Source Title Journal of Electrical Engineering - Elektrotechnický časopis. - : Slovenská technická univerzita v Bratislave - ISSN 1335-3632
Roč. 68, č. 7 (2017), s. 3-9Number of pages 7 s. Publication form Print - P Language eng - English Country SK - Slovakia Keywords diamond ; Si-V centre ; photoluminescence ; microwave-plasma enhanced CVD ; activation energy Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LD15003 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA14-04790S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000423262300002 EID SCOPUS 85040813214 DOI 10.1515/jee-2017-0048 Annotation Nanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3 , Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈ 3.5 cm−1 ) due to tension in the diamond film. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
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