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GaN quantum dot polarity determination by X-ray photoelectron diffraction
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SYSNO ASEP 0463238 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title GaN quantum dot polarity determination by X-ray photoelectron diffraction Author(s) Romanyuk, Olexandr (FZU-D) RID, ORCID
Bartoš, Igor (FZU-D) RID, ORCID
Brault, J. (FR)
De Mierry, P. (FR)
Paskova, T. (US)
Jiříček, Petr (FZU-D) RID, ORCID, SAISource Title Applied Surface Science. - : Elsevier - ISSN 0169-4332
Roč. 389, Dec (2016), s. 1156-1160Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords GaN ; semipolar GaN ; quantum dots ; X-ray photoelectron diffraction ; surface polarity Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA15-01687S GA ČR - Czech Science Foundation (CSF) LM2015088 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000384577600141 EID SCOPUS 84983535102 DOI 10.1016/j.apsusc.2016.07.169 Annotation Growth of GaN quantum dots (QDs) on polar and semipolar GaN substrates is a promising technology for efficient nitride-based light emitting diodes (LED). The QDs crystal orientation typically repeats the polarity of the substrate. In case of non-polar or semipolar substrates, the polarity of QDs is not obvious. In this article, the polarity of GaN QDs and of underlying layers was investigated nondestructively by X-ray photoelectron diffraction (XPD). It is confirmed experimentally, that the crystalline orientation of polar (0001) GaN QDs follows the orientation of the (0001) sapphire substrate. In case of semipolar GaN QDs grown on source(1-100) sapphire substrate, the (11-22) polarity of QDs was determined. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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