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Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature

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    0456224 - FZÚ 2016 RIV DE eng J - Journal Article
    Telychko, Mykola - Berger, Jan - Majzik, Zsolt - Jelínek, Pavel - Švec, Martin
    Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature.
    Beilstein Journal of Nanotechnology. Roč. 6, Apr (2015), s. 901-906. ISSN 2190-4286. E-ISSN 2190-4286
    R&D Projects: GA ČR(CZ) GA14-02079S; GA ČR GB14-37427G
    Institutional support: RVO:68378271
    Keywords : graphene * AFM * STM * DFT * atomic resolution
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 2.778, year: 2015

    We investigated single-layer graphene on SiC (0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out- of-plane relaxations of carbon atoms.
    Permanent Link: http://hdl.handle.net/11104/0256784

     
     
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