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LPE Growth of III-V Semiconductors from rare-earth Treated Melts
- 1.0346036 - ÚFE 2011 CZ eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE Growth of III-V Semiconductors from rare-earth Treated Melts.
Proceedings of the 18th Joint seminar Development of materials science in research and education. Praha: Czechoslovak association for crystal growth, 2008 - (Nitsch, K.; Rodová, M.), s. 16-17. ISBN 978-80-254-0864-3.
[18. Development of Materials Science in Research and Education. Hnanice (CZ), 02.09.2008-05.09.2008]
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
We focus on the characterization of InP and InGaAsP layers prepared by liquid phase epitaxy with rare-earth admixtures. We applied photoluminescence spectroscopy (PL), capacitance-voltage measurements, and secondary ion mass spectroscopy in order to explain: (i) the gettering effect and conductivity crossover of InP layers for Pr treated samples, (ii) narrowing of the PL and elecroluminescent spectra of the active InGaAsP region of a double-heterostructure LED.
Permanent Link: http://hdl.handle.net/11104/0187165
Number of the records: 1