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Current-voltage characteristics of GaSb homojunctions prepared by MOVPE

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    0134299 - FZU-D 20030195 RIV US eng J - Journal Article
    Toušková, J. - Kindl, Dobroslav - Blahitka, B. - Toušek, J. - Hulicius, Eduard - Pangrác, Jiří - Samokhin, Jevgen - Šimeček, Tomislav - Výborný, Zdeněk
    Current-voltage characteristics of GaSb homojunctions prepared by MOVPE.
    Solid-State Electronics. Roč. 47, - (2003), s. 1471-1478. ISSN 0038-1101. E-ISSN 1879-2405
    R&D Projects: GA AV ČR IAA1010806; GA AV ČR KSK1010104
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : current-voltage characteristics * MOVPE * charge transport * GaSb * Shockly-Read-Hall recombination model
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.008, year: 2003

    mechanism of charge transport through GaSb p-n homojunctions prepared by low pressure metal organic vapour phase epitaxy technology was studied. Analysis of temperature dependences of some parameters of the experimental characteristics gave, besides the expected value of band gap energy, also the activation energy of the recombination level.
    Permanent Link: http://hdl.handle.net/11104/0032209

     
     

Number of the records: 1  

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