The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study

0561462 - FZÚ 2023 RIV GB eng J - Journal Article
Buryi, Maksym - Babin, Vladimir - Hubáček, Tomáš - Jarý, Vítězslav - Hájek, František - Kuldová, Karla - Artemenko, Anna - Hospodková, Alice
The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study.
Radiation Measurements. Roč. 157, Sep (2022), č. článku 106842. ISSN 1350-4487. E-ISSN 1879-0925
R&D Projects: GA ČR(CZ) GJ20-05497Y
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : GaN * thin films * Si doping * luminescence * EPR
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.radmeas.2022.106842

Metal Organic Vapour Phase epitaxy (MOVPE) grown GaN layers doped with Si were studied by means of radio-, photo- and thermally stimulated luminescence, scintillation decay kinetics, as well as electron paramagnetic resonance. Two luminescence bands were observed: the narrow and fast peaking at about 3.45 eV (ascribed to excitons) and the broad and slow one having maximum at about 2.2 eV (produced by the defect – a carbon occupying nitrogen site). The decay time and the intensity of exciton and defect-related emission exhibit dependence on the doping level of Si. Both bands are getting faster upon the increased Si content. Interestingly, the effect of Si on the conductivity properties of the GaN samples was observed by means of electron paramagnetic resonance.
Permanent Link: https://hdl.handle.net/11104/0334173