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Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media

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    SYSNO ASEP0542789
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleReversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media
    Author(s) Kondrat, O. (UA)
    Holomb, R. (UA)
    Mitsa, A. (UA)
    Veres, M. (HU)
    Csik, A. (HU)
    Takats, V. (HU)
    Duchoň, T. (CZ)
    Veltruská, K. (CZ)
    Vondráček, Martin (FZU-D) RID, ORCID
    Tsud, N. (CZ)
    Mitsa, V. (UA)
    Matolín, V. (CZ)
    Prince, K. C. (IT)
    Number of authors13
    Article number146240
    Source TitleApplied Surface Science. - : Elsevier - ISSN 0169-4332
    Roč. 518, July (2020)
    Number of pages7 s.
    Languageeng - English
    CountryNL - Netherlands
    KeywordsAs-Se nanolayers ; synchrotron radiation photoelectron spectroscopy ; photoinduced changes ; reversibility ; Valence band
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000531747600007
    EID SCOPUS85083078445
    DOI10.1016/j.apsusc.2020.146240
    AnnotationReversible structural changes of As-rich As–Se nanolayers occurring during in situ thermal annealing and above-bandgap laser illumination were studied by synchrotron radiation photoelectron spectroscopy. It was found that the first thermal annealing of As56Se44 nanolayers led to a decrease of the concentration of As that can be connected with evaporation of more volatile As-rich fractions from the surface. This process is accompanied by structural rearrangements in the nanolayers. In situ green laser illumination of annealed samples causes an increase in the concentration of homopolar As–As bonds associated with As-Se2As s, while the opposite effect was detected during further thermal treatment.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2022
    Electronic addresshttps://doi.org/10.1016/j.apsusc.2020.146240
Number of the records: 1  

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