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Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond
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SYSNO 0511336 Title Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Dragounová, K. (CZ)
Ashcheulov, Petr (FZU-D) ORCID, RID
Taylor, Andrew (FZU-D) RID, ORCID
Mortet, Vincent (FZU-D) RID, ORCID
Poruba, Aleš (FZU-D) RIDCorespondence/senior Remeš, Zdeněk - Korespondující autor Source Title Physica Status Solidi A : Applications and Materials Science. Roč. 216, č. 21 (2019), s. 1-6. - : Wiley Article number 1900241 Document Type Článek v odborném periodiku Grant CZ.02.1.01/0.0/0.0/16_019/0000760, XE - EU countries EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic GC19-02858J GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Language eng Country DE Keywords silicon carbide * boron-doped diamond * diode * photothermal deflection spectroscopy * Raman spectroscopy * infrared spectroscopy * current-voltage characteristics URL https://doi.org/10.1002/pssa.201900241 Permanent Link http://hdl.handle.net/11104/0301632
Number of the records: 1