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Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture

  1. 1.
    SYSNO0436880
    TitleElectrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture
    Author(s) Mikolášek, M. (SK)
    Vojs, M. (SK)
    Varga, Marián (FZU-D) RID, ORCID
    Babchenko, Oleg (FZU-D) RID, ORCID
    Ižák, Tibor (FZU-D) RID
    Marton, M. (SK)
    Kromka, Alexander (FZU-D) RID, ORCID, SAI
    Harmatha, L. (SK)
    Source Title ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. S. 37-40. - Bratislava : Slovak University of Technology, 2014 / Breza J. ; Donoval D. ; Vavrinsky E.
    Conference International Conference on Advanced Semiconductor Devices and Microsystems /10./, Smolenice, 20.10.2014-22.10.2014
    Document TypeKonferenční příspěvek (zahraniční konf.)
    Grant GBP108/12/G108 GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountrySK
    Keywords diamond films * nitrogen doping * Raman spectroscopy * electrical measurements
    Permanent Linkhttp://hdl.handle.net/11104/0240510
     
Number of the records: 1  

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