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Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture
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SYSNO ASEP 0436880 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture Author(s) Mikolášek, M. (SK)
Vojs, M. (SK)
Varga, Marián (FZU-D) RID, ORCID
Babchenko, Oleg (FZU-D) RID, ORCID
Ižák, Tibor (FZU-D) RID
Marton, M. (SK)
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Harmatha, L. (SK)Source Title ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. - Bratislava : Slovak University of Technology, 2014 / Breza J. ; Donoval D. ; Vavrinsky E. - ISBN 978-1-4799-5474-2 Pages s. 37-40 Number of pages 4 s. Publication form Print - P Action International Conference on Advanced Semiconductor Devices and Microsystems /10./ Event date 20.10.2014-22.10.2014 VEvent location Smolenice Country SK - Slovakia Event type WRD Language eng - English Country SK - Slovakia Keywords diamond films ; nitrogen doping ; Raman spectroscopy ; electrical measurements Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation The paper deals with electrical characterization of nanocrystalline diamond / ptype crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2015
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