Number of the records: 1
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used
- 1.
SYSNO ASEP 0424992 Document Type C - Proceedings Paper (int. conf.) R&D Document Type The record was not marked in the RIV Title Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used Author(s) Pham, T.T. (VN)
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Hruška, Karel (FZU-D) RID, ORCID
Le, V.T.H. (VN)
Stuchlík, Jiří (FZU-D) RID, ORCIDSource Title ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). - Cairn : IPCS International Plasma Chemistry Society, 2013 - ISBN N Number of pages 4 s. Publication form Online - E Action International Symposium on Plasma Chemistry (ISPC 21)/21./ Event date 04.08.2013-09.08.2013 VEvent location Cairns Convention Centre Country AU - Australia Event type WRD Language eng - English Country AU - Australia Keywords Si:H thin film ; ZnO ; PECVD ; catalytic effect ; Si-NWs Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA203/09/1088 GA ČR - Czech Science Foundation (CSF) LH12236 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation A research some convenient structure of silicon thin film solar cells with higher solar energy conversion is at area of interest up to now. In this paper we focus on the fabrication and study the properties of Si:H thin film which was formed on the transparent conductive thin film ZnO. We study a possibilities how to deposit by PECVD technique with assistance of catalytic effect of Sn an optimal structure of Si:H thin film /amorphouse + microcrystalline + eventually with contain of Si nanowires Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2014
Number of the records: 1