Number of the records: 1
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used
- 1.Pham, T.T. - Stuchlíková, The-Ha - Ledinský, Martin - Hruška, Karel - Le, V.T.H. - Stuchlík, Jiří
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used.
ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). Cairn: IPCS International Plasma Chemistry Society, 2013. IPSC, 21. ISBN N.
[International Symposium on Plasma Chemistry (ISPC 21)/21./. Cairns Convention Centre (AU), 04.08.2013-09.08.2013]
http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf
http://hdl.handle.net/11104/0230960
Number of the records: 1