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Graphite/InP and graphite/GaN Schottky barrier hydrogen sensors with electrophoretically deposited Pd or Pt nanoparticles
- 1.0387292 - ÚFE 2013 RIV US eng J - Journal Article
Žďánský, Karel
Graphite/InP and graphite/GaN Schottky barrier hydrogen sensors with electrophoretically deposited Pd or Pt nanoparticles.
Nanoscale Research Letters. Roč. 7, č. 415 (2012), s. 4151-4156. ISSN 1931-7573. E-ISSN 1556-276X
R&D Projects: GA MŠMT(CZ) OC10021
Institutional support: RVO:67985882
Keywords : semiconductor devices * nanostructures * sensors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.524, year: 2012
By applying colloidal graphite, we prepared Schottky contacts on polished n-InP and on n-GaN wafers partly covered electrophoretically with nanoparticles of catalytic metals Pd or Pt. The nanoparticles were imaged by SEM, AFM and STM. Schottky barrier heights were virtually equal to energy of vacuum level alignments between InP or GaP and Pd or Pt (Schottky-Mott limits) - a good precondition for high sensitivity to hydrogen. Indeed, high sensitivity to hydrogen, with the detection limit below 1 ppm was proved
Permanent Link: http://hdl.handle.net/11104/0220245
Number of the records: 1