Purification Action of Rare-Earth Elements in the LPE Growth of III-V Semiconductors: Feedback Phenomena

0346128 - ÚFE 2011 RIV US eng C - Conference Paper (international conference)
Šrobár, Fedor - Procházková, Olga
Purification Action of Rare-Earth Elements in the LPE Growth of III-V Semiconductors: Feedback Phenomena.
ASDAM 2008, CONFERENCE PROCEEDINGS. NEW YORK: IEEE, 2008 - (Hascik, S.; Osvald, J.), s. 259-262. ISBN 978-1-4244-2325-5.
[7th International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice (SK), 12.10.2008-16.10.2008]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductors * Rare-earth elements * feedback
Subject RIV: BM - Solid Matter Physics ; Magnetism

Rare-earth elements present in the growth melt of the LPE process possess the ability to chemically bind atoms responsible for shallow impurity levels in III-V semiconductor compounds. In continuation of our recent theoretical work on this subject, we present a diagrammatical analysis of equations governing this phenomenon. The causal picture of the dependence of free donor concentration versus rare-earth content in the growth melt contains two loops of negative feedback which play a major part in shaping this relation.
Permanent Link: http://hdl.handle.net/11104/0187232