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Large-Area Mechanically-Exfoliated Two-Dimensional Materials on Arbitrary Substrates

  1. 1.
    SYSNO ASEP0571408
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleLarge-Area Mechanically-Exfoliated Two-Dimensional Materials on Arbitrary Substrates
    Author(s) Sahu, Satyam (UFCH-W)
    Haider, Golam (UFCH-W) ORCID, RID
    Rodriguez, Álvaro (UFCH-W)
    Plšek, Jan (UFCH-W) RID, ORCID
    Mergl, Martin (UFCH-W)
    Kalbáč, Martin (UFCH-W) RID, ORCID
    Frank, Otakar (UFCH-W) RID, ORCID
    Velický, Matěj (UFCH-W) ORCID, RID, SAI
    Article number2201993
    Source TitleAdvanced Materials Technologies - ISSN 2365-709X
    Roč. 8, č. 12 (2023)
    Number of pages9 s.
    Languageeng - English
    CountryUS - United States
    Keywords2D materials ; arbitrary substrates ; flake transfers ; gold-assisted exfoliation ; heterostructures ; photodetectors
    Subject RIVCF - Physical ; Theoretical Chemistry
    OECD categoryPhysical chemistry
    R&D ProjectsGX20-08633X GA ČR - Czech Science Foundation (CSF)
    EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportUFCH-W - RVO:61388955
    UT WOS000976089600001
    EID SCOPUS85153393243
    DOI10.1002/admt.202201993
    AnnotationAtomically-thin crystals have been shown to be rich in fundamental phenomena and are promising for various applications. Mechanical exfoliation of (2D) materials from bulk crystals is particularly suited for fundamental studies due to the high quality of the resulting monolayer crystals. To date, several techniques have been developed to increase the exfoliation yield, however, they still suffer drawbacks. In this work, a novel method that exploits gold-assisted exfoliation to prepare large-area monolayers of various layered materials followed by their transfer to arbitrary substrates is introduced. X-ray photoelectron, Raman, and photoluminescence spectroscopies are employed to assess the quality of the prepared layers and their optical properties. Then, field-effect transistors and photodetectors are fabricated to demonstrate the suitability of this technique for large-area optoelectronic devices.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2024
    Electronic addresshttps://hdl.handle.net/11104/0342637
Number of the records: 1  

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