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Revealing nanoscale strain mechanisms in ion-irradiated multilayers

  1. 1.
    SYSNO ASEP0556569
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleRevealing nanoscale strain mechanisms in ion-irradiated multilayers
    Author(s) Daghbouj, N. (CZ)
    Sen, H.S. (CZ)
    Callisti, M. (GB)
    Vronka, Marek (FZU-D) ORCID, RID
    Karlík, M. (CZ)
    Duchoň, Jan (FZU-D) ORCID, RID
    Čech, J. (CZ)
    Havránek, Vladimír (UJF-V) RID, SAI, ORCID
    Polcar, T. (CZ)
    Number of authors9
    Article number117807
    Source TitleActa Materialia. - : Elsevier - ISSN 1359-6454
    Roč. 229, May (2022)
    Number of pages11 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordsion-irradiated multilayers ; strain mapping ; TEM
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Subject RIV - cooperationNuclear Physics Institute - Ceramics, Fire-Resistant Materials and Glass
    R&D ProjectsLM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Research InfrastructureCzechNanoLab - 90110 - Vysoké učení technické v Brně
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271 ; UJF-V - RVO:61389005
    UT WOS000795076100001
    EID SCOPUS85125619641
    DOI10.1016/j.actamat.2022.117807
    AnnotationUnderstanding strain evolution induced by ion bombardment in nuclear materials with high interface density is crucial for next-generation reactors. X-ray and selected-area diffraction patterns (SADPs) measurements reveal, after Cu implantation, that a relatively high out-of-plane strain is created in thin Zr/Nb 6 multilayers, while thick Zr/Nb 96 is barely distorted. The absence of layer deformation in Zr/Nb 96 is explained by local TEM strain mapping.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2023
    Electronic addresshttps://doi.org/10.1016/j.actamat.2022.117807
Number of the records: 1  

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