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Nucleation and growth of metal-catalyzed silicon nanowires under plasma
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SYSNO ASEP 0539179 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Nucleation and growth of metal-catalyzed silicon nanowires under plasma Author(s) Hývl, Matěj (FZU-D) ORCID
Müller, Martin (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Šilhavík, Martin (FZU-D) ORCID
Kočka, Jan (FZU-D) RID, ORCID, SAI
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Červenka, Jiří (FZU-D) RID, ORCIDNumber of authors 8 Article number 225601 Source Title Nanotechnology. - : Institute of Physics Publishing - ISSN 0957-4484
Roč. 31, č. 22 (2020), s. 1-11Number of pages 11 s. Language eng - English Country GB - United Kingdom Keywords nanowire ; silicon ; growth mechanism ; catalyst ; plasma ; PECVD ; nucleation Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-12355S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000521482000001 EID SCOPUS 85082094165 DOI 10.1088/1361-6528/ab76ef Annotation We report the results of a microscopic study of the nucleation and early growth stages of metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The nucleation ofsilicon nanowires is investigated as a function of different deposition conditions and metalcatalysts(Sn, In and Au)using correlation of atomic force microscopy and scanning electronmicroscopy. This correlation method enabled us to visualize individual catalytic nanoparticlesbefore and after the nanowire growth and identify the key parameters influencing the nanowirenucleation under plasma. The size and position of catalytic nanoparticles are found to play asignificant role in the nucleation. We demonstrate that only small isolated nanoparticles in therange of 10–20 nm contribute to the nanowire growth under plasma, while larger nanoparticlesare inactive because they get buried under a layer of a-Si:H before reaching supersaturation.Systematic analysis of different growth parameters reveals that the nanowire growth in plasmacontradicts the vapor–liquid–solid mechanism at thermal equilibrium in many ways. Thenanowire growth is much faster and proceeds even at negligible silicon solubility and bellow theeutectic temperature of the metal-silicon alloy. Based on the observations, we propose thenanowire growth under plasma to be characterized by the rapid solidification mechanism, wherea crystalline silicon phase emerges from a metastable supersaturated liquid metal-silicon phase inlocal nonequilibrium.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address https://doi.org/10.1088/1361-6528/ab76ef
Number of the records: 1