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Nitride semiconductors - properties and applications
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SYSNO ASEP 0537995 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Nitride semiconductors - properties and applications Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hájek, František (FZU-D) ORCID
Hubáček, Tomáš (FZU-D) ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Dominec, Filip (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCIDNumber of authors 6 Source Title 20th Conference of Czech and Slovak Physicists Proceedings. - Košice : Slovak Physical Society, Czech Physical Society, 2020 / Džubinská A. ; Reiffers M. - ISBN 978-80-89855-13-1 Pages s. 32-36 Number of pages 5 s. Publication form Online - E Action Conference of Czech and Slovak Physicists /20./ Event date 07.09.2020 - 10.09.2020 VEvent location Prague Country CZ - Czech Republic Event type EUR Language eng - English Country SK - Slovakia Keywords nitride semiconductors ; applications ; LED ; HEMT Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation Nitrogen became very important for semiconductor industry in last thirty years and many new light emitting or electronic applications are based on nitride semiconductors, such as blue or UV light emitting diodes (LEDs), laser diodes (LDs) or high electron mobility transistors (HEMTs) used for high power and high frequency applications. Very tough competition takes place in the field of electromobility where the winner is not decided, yet. However, a big increase is expected in GaN production connected with the new 5G network. Higher bandwidth will enable higher capacity, which means increased number of connected devices. This network will therefore have higher power requirements. GaN based HEMT circuits are supposed to be essential for 5G base stations. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021
Number of the records: 1