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Temperature sensor based on IR-laser reduced Graphene Oxide
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SYSNO ASEP 0525008 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Temperature sensor based on IR-laser reduced Graphene Oxide Author(s) Silipigni, L. (IT)
Salvato, G. (IT)
Fazio, B. (IT)
Di Marco, G. (IT)
Proverbio, E. (IT)
Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
Torrisi, Alfio (UJF-V) RID, ORCID
Torrisi, L. (IT)Number of authors 8 Article number C04006 Source Title Journal of Instrumentation. - : Institute of Physics Publishing - ISSN 1748-0221
Roč. 15, č. 4 (2020)Number of pages 11 s. Publication form Print - P Action Conference on Plasma Physics by Laser and Applications (PPLA) Event date 29.10.2019 - 31.10.2019 VEvent location Pisa Country IT - Italy Event type WRD Language eng - English Country GB - United Kingdom Keywords Fiber Lasers ; interactions of radiation with matter ; materials for solid-state detectors Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Optics (including laser optics and quantum optics) R&D Projects LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support UJF-V - RVO:61389005 UT WOS 000534739900006 EID SCOPUS 85084186938 DOI 10.1088/1748-0221/15/04/C04006 Annotation A simple, cost-effective approach to realize a sensitive temperature sensor based on IR laser reduced graphene oxide (IRLrGO) is reported. The sensor has been obtained by irradiating a graphene oxide (GO) film, placed between two thin glass substrates, with a continuous wave diode laser operating at 970 nm along its entire length. A conductive strip, 13 mm long, 300 mu m wide and 7 mu m thick, has been generated by moving the GO film on an X-Y translator stage with a given velocity with respect to the fixed laser fiber tip position. The laser treatment has given rise to the GO reduction confirmed by the resistance R measurements as well as from SEM, EDX, ATR-FTIR and Raman analyses. The temperature dependence of the conductive strip resistance has been measured in air from 30 degrees C to 80 degrees C and in high vacuum from 80K to 300 K. The sample acts as a sensitive and low mass Resistance Temperature Detector (RTD). Such a sensor is biocompatible and requires a very low bias (< 1 V). While the performances of the IRLrGO temperature sensor are stable under high vacuum conditions at room temperature, its behavior remains to be studied when it operates under different environmental conditions. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2021 Electronic address https://doi.org/10.1088/1748-0221/15/04/C04006
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