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Towards a germanium and silicon laser: the history and the present
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SYSNO ASEP 0521385 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Towards a germanium and silicon laser: the history and the present Author(s) Pelant, Ivan (FZU-D) RID, ORCID, SAI
Kůsová, Kateřina (FZU-D) RID, ORCIDNumber of authors 5 Article number 624 Source Title Crystals. - : MDPI - ISSN 2073-4352
Roč. 9, č. 12 (2019), s. 1-19Number of pages 19 s. Language eng - English Country CH - Switzerland Keywords lasing ; silicon ; germanium ; indirect band gap ; light emission ; nanostructures Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA18-05552S GA ČR - Czech Science Foundation (CSF) Method of publishing Open access Institutional support FZU-D - RVO:68378271 UT WOS 000506676000019 EID SCOPUS 85075900010 DOI 10.3390/cryst9120624 Annotation Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address http://hdl.handle.net/11104/0306016
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