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Improvement of GaN crystalline quality by SiN.sub.x./sub. layer grown by MOVPE
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SYSNO 0520842 Title Improvement of GaN crystalline quality by SiNx layer grown by MOVPE Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Slavická Zíková, Markéta (FZU-D) ORCID
Hubáček, Tomáš (FZU-D) ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Hájek, František (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Hasenöhrl, S. (SK)Corespondence/senior Slavická Zíková, Markéta - Korespondující autor Source Title Lithuanian Journal of Physics. Roč. 59, č. 4 (2019), s. 179-186. - : Lithuanian Academy of Sciences Publishers Document Type Článek v odborném periodiku Grant LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic GA16-11769S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic TH02010014 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) Institutional support FZU-D - RVO:68378271 Language eng Country LT Keywords dislocations * MOVPE * GaN * SiNx * photoluminescence URL http://hdl.handle.net/11104/0305500 Permanent Link http://hdl.handle.net/11104/0305500 File Download Size Commentary Version Access 0520842.pdf 0 3 MB OA časopis Publisher’s postprint open-access
Number of the records: 1