Number of the records: 1
Improvement of GaN crystalline quality by SiN.sub.x./sub. layer grown by MOVPE
- 1.Hospodková, Alice - Slavická Zíková, Markéta - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla - Hájek, František - Dominec, Filip - Vetushka, Aliaksi - Hasenöhrl, S.
Improvement of GaN crystalline quality by SiNx layer grown by MOVPE.
Lithuanian Journal of Physics. Roč. 59, č. 4 (2019), s. 179-186. ISSN 1648-8504. E-ISSN 1648-8504
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.966, year: 2019
Method of publishing: Open access
http://hdl.handle.net/11104/0305500
Number of the records: 1