Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films

Fait, Jan; Potocký, Štěpán; Stehlík, Štěpán; Stuchlík, Jiří; Artemenko, Anna; Kromka, Alexander; Rezek, B.

doi:https://dx.doi.org/10.1016/j.apsusc.2019.03.064

Number of the records: 1

Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films

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SYSNO ASEP	0520201
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Nucleation of diamond micro-patterns with photoluminescent SiV centers controlled by amorphous silicon thin films
Author(s)	Fait, Jan (FZU-D)_ORCID Potocký, Štěpán (FZU-D)_{RID, ORCID} Stehlík, Štěpán (FZU-D)_{RID, ORCID} Stuchlík, Jiří (FZU-D)_{RID, ORCID} Artemenko, Anna (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Rezek, B. (CZ)
Number of authors	7
Source Title	Applied Surface Science. - : Elsevier - ISSN 0169-4332 Roč. 480, June (2019), s. 1008-1013
Number of pages	6 s.
Language	eng - English
Country	NL - Netherlands
Keywords	spontaneous nucleation ; diamond ; hydrogenated amorphous silicon ; selective growth ; focused microwave CVD
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA17-19968S GA ČR - Czech Science Foundation (CSF)
Method of publishing	Limited access
Institutional support	FZU-D - RVO:68378271
UT WOS	000463008200115
EID SCOPUS	85062731816
DOI	10.1016/j.apsusc.2019.03.064
Annotation	Selective deposition of diamond allows bottom-up growth of diamond nanostructures and nanoscale devices. However, it remains challenging to reduce the size of the patterns and to suppress parasitic spontaneous nucleation. We show here that thin layers of hydrogenated amorphous silicon (down to 40 nm) efficiently suppress spontaneous nucleation of diamond. The suppression of diamond nucleation does not depend on the substrate materials below hydrogenated amorphous silicon (Si, SiO2, Pt, Ni). We attribute the suppressed diamond nucleation to surface disorder on atomic scale. By using a structured layer of hydrogenated amorphous silicon, highly selective growth of diamond micro-patterns with optically active SiV centers by low-temperature microwave plasma chemical vapor deposition is achieved.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2020
Electronic address	https://doi.org/10.1016/j.apsusc.2019.03.064

Number of the records: 1