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Au incorporation into various ZnO crystallographic cuts realised by ion implantation - ZnO damage characterization

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    SYSNO ASEP0511855
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleAu incorporation into various ZnO crystallographic cuts realised by ion implantation - ZnO damage characterization
    Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
    Malinský, Petr (UJF-V) RID, ORCID, SAI
    Jagerová, Adéla (UJF-V) ORCID, SAI
    Mikšová, Romana (UJF-V) RID, ORCID, SAI
    Nekvindová, P. (CZ)
    Cajzl, J. (CZ)
    Bottger, R. (DE)
    Akhmadaliev, S. (DE)
    Number of authors8
    Article numberUNSP 108892
    Source TitleVacuum. - : Elsevier - ISSN 0042-207X
    Roč. 169, č. 11 (2019)
    Number of pages9 s.
    Publication formPrint - P
    Languageeng - English
    CountryGB - United Kingdom
    KeywordsZnO ; RBS ; ion implantation
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    OECD categoryAtomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
    R&D ProjectsLM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GA18-03346S GA ČR - Czech Science Foundation (CSF)
    Method of publishingLimited access
    Institutional supportUJF-V - RVO:61389005
    UT WOS000494887000044
    EID SCOPUS85071987675
    DOI10.1016/j.vacuum.2019.108892
    AnnotationThis paper presents a study of defect evolution in various ZnO crystallographic cuts caused by Au implantation. The investigation has focused on ZnO structure characterisation, Au distribution and the interior morphology of the a-, m- and c-planes ZnO single crystals implanted with 400 keV Au+ ions at the ion fluences of 5 x 10(14) and 1 x 10(15) cm(-2) and subsequently annealed at 600 degrees C in O-2. The structure modification was studied using Rutherford backscattering spectrometry in the channelling mode and Raman spectroscopy. After the ion-implantation process, low surface damage was observed in all ZnO orientations unlike deep structural damage. Deep structural damage grew with increased Au-ion fluence and Au did not exhibit strong out-diffusion from the depth to the surface during the post-implantation annealing. Small but noticeable differences were observed between different ZnO orientations. RBS measurements during ion implantation revealed more progressive deep-damage formation in the c- and m-planes than in the a-plane ZnO. Simultaneously, the smallest Zn sub-lattice disorder deduced from RBS/C measurements was observed in the a-plane ZnO. During post-implantation annealing, a slight structure recovery (about 4%) was observed in all orientations. Raman spectroscopy confirmed the increasing structure disorder with the enhanced ion fluence for all as-implanted ZnO orientations and a partial reconstruction of the ZnO structure during annealing, when the intensity of E-2 phonons was increased and that of longitudinal optical (LO) phonons was suppressed because of the disorder recovery. E-2 (high) and E-1 (LO) Raman phonon modes connected with oxygen sub-lattice ordering/disordering have been investigated in detail - they show a significant modification mainly in the m-plane. The cause of the different behaviour of ZnO planes as well as the differences in the incorporation and movement of Au and Er atoms in the ZnO structure are discussed in the work.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2020
    Electronic addresshttps://doi.org/10.1016/j.vacuum.2019.108892
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