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Q-switching of a Tm,Ho:KLu(WO.sub.4./sub.).sub.2./sub. microchip laser by a graphene-based saturable absorber
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SYSNO ASEP 0510653 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a graphene-based saturable absorber Author(s) Serres, J.M. (ES)
Loiko, P. (ES)
Mateos, X. (ES)
Jambunathan, Venkatesan (FZU-D)
Yumashev, K. (BY)
Griebner, U. (DE)
Petrov, V. (DE)
Aguilo, M. (ES)
Díaz, F. (ES)Number of authors 9 Article number 025801 Source Title Laser Physics Letters. - : Institute of Physics Publishing - ISSN 1612-2011
Roč. 13, č. 2 (2016), s. 1-5Number of pages 5 s. Language eng - English Country DE - Germany Keywords Q-switched laser ; graphene ; double tungstates ; holmium ion ; energy transfer Subject RIV BH - Optics, Masers, Lasers OECD category Optics (including laser optics and quantum optics) R&D Projects LO1602 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000371489100024 EID SCOPUS 84957672097 DOI 10.1088/1612-2011/13/2/025801 Annotation The first Ho microchip laser passively Q-switched using a graphene-based saturable absorber is demonstrated based on a Tm,Ho:KLu(WO4)2 crystal cut along the Ng-axis. A maximum average output power of 74 mW is extracted from the diode-pumped laser at 2061 nm with a slope efficiency of 4%. Pulses as short as 200 ns with an energy of ~0.2 μJ are obtained at a repetition rate of 340 kHz. The energy transfer (ET), 3 F4 (Tm3+) ↔ 5 I7 (Ho3+) is studied, yielding ET parameters of P28 = 1.69 and P71 = 0.15 × 10−22 cm3 μs−1 , revealing the strong prevalence of direct ET. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address https://doi.org/10.1088/1612-2011/13/2/025801
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