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Architecture of nanoscale ferroelectric domains in GaMo.sub.4./sub.S.sub.8./sub.

  1. 1.
    SYSNO ASEP0498118
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleArchitecture of nanoscale ferroelectric domains in GaMo4S8
    Author(s) Neuber, E. (DE)
    Milde, P. (DE)
    Butykai, A. (HU)
    Bordács, S. (HU)
    Nakamura, H. (JP)
    Waki, T. (JP)
    Tabata, Y. (JP)
    Geirhos, K. (DE)
    Lunkenheimer, P. (DE)
    Kersmarki, I. (HU)
    Ondrejkovič, Petr (FZU-D) RID, ORCID
    Hlinka, Jiří (FZU-D) RID, ORCID
    Eng, L.M. (DE)
    Number of authors13
    Article number445402
    Source TitleJournal of Physics-Condensed Matter. - : Institute of Physics Publishing - ISSN 0953-8984
    Roč. 30, č. 44 (2018), s. 1-7
    Number of pages7 s.
    Publication formOnline - E
    Languageeng - English
    CountryGB - United Kingdom
    KeywordsKelvin probe force microscopy ; piezoresponse force microscopy ; lacunar spinel ; ferroelectricity ; multiferroicity ; domain walls ; topology
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGC17-11494J GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000447586600001
    EID SCOPUS85055072814
    DOI10.1088/1361-648X/aae448
    AnnotationLocal-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetry and mechanical compatibility analysis to uncover the hierarchical domain structures, developing on the 10-100 nm scale. The identified domain architecture involves a plethora of ferroelectric domain boundaries and junctions, including primary and secondary domain walls in both electrically neutral and charged configurations, and topological line defects transforming neutral secondary walls into two oppositely charged ones.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2019
Number of the records: 1  

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