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Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma
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SYSNO ASEP 0486982 Document Type A - Abstract R&D Document Type O - Ostatní Title Diamond growth on horizontally and vertically aligned Si substrates in low pressure surface wave plasma Author(s) Domonkos, Mária (FZU-D) RID
Ižák, Tibor (FZU-D) RID
Varga, Marián (FZU-D) RID, ORCID
Potocký, Štěpán (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 5 Source Title 2nd International Conference on Applied Surface Science (ICASS). - Dalian, 2017 / Rudolph H. - ISSN 0169-4332 Number of pages 1 s. Publication form Online - E Action International Conference on Applied Surface Science (ICASS) /2./ Event date 12.06.2017 - 15.06.2017 VEvent location Dalian Country CN - China Event type WRD Language eng - English Country CN - China Keywords nucleation ; Si substrates ; VerS ; HorS Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation This work focuses on spontaneous nucleation on horizontally and vertically aligned nontreated Si substrates. Diamond growth is initiated using a CH₄/H₂/CO₂ gas mixture with varying H content for 5 and 10 hours. As a reference, nucleated substrates are investigated. The SEM and AFM images reveal variation in the properties of samples (size of grains, surface coverage, ND, film thickness) which depend on the sample alignment and Z-axes of VerS. Independently of deposition conditions, the grain size and density and film thickness decreases in the downward direction. The grain population exhibits a polymodal size distribution on the whole substrate for both VerS and HorS. Moreover, for both non-treated and nucleated samples the density and size of diamond grains grown on HorS are similar to the size/density on VerS at a specific Z-position. Our findings confirm that the linear antenna system can be routinely utilised for growing D on 3D substrates.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018 Electronic address https://www.elsevier.com/events/conferences/international-conference-on-applied-surface-science/programme
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