Electrical resistivity anomaly, valence shift of Pr ion, and magnetic behavior in epitaxial (Pr.sub.1-y./sub.Y.sub.y./sub.).sub.1-x./sub.Ca.sub.x./sub.CoO.sub.3./sub. thin films under compressive strain

Fujishiro, H.; Noda, Y.; Akuzawa, K.; Naito, T.; Ito, A.; Goto, T.; Maryško, Miroslav; Jirák, Zdeněk; Hejtmánek, Jiří; Nitta, K.

doi:https://dx.doi.org/10.1063/1.4978747

Number of the records: 1

Electrical resistivity anomaly, valence shift of Pr ion, and magnetic behavior in epitaxial (Pr.sub.1-y./sub.Y.sub.y./sub.).sub.1-x./sub.Ca.sub.x./sub.CoO.sub.3./sub. thin films under compressive strain

1.

SYSNO ASEP	0485352
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Electrical resistivity anomaly, valence shift of Pr ion, and magnetic behavior in epitaxial (Pr_1-yY_y)_1-xCa_xCoO₃ thin films under compressive strain
Author(s)	Fujishiro, H. (JP) Noda, Y. (JP) Akuzawa, K. (JP) Naito, T. (JP) Ito, A. (JP) Goto, T. (JP) Maryško, Miroslav (FZU-D)_RID Jirák, Zdeněk (FZU-D)_{RID, ORCID, SAI} Hejtmánek, Jiří (FZU-D)_{RID, ORCID} Nitta, K. (JP)
Number of authors	10
Article number	115104
Source Title	Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979 Roč. 121, č. 11 (2017), s. 1-8
Number of pages	8 s.
Publication form	Print - P
Language	eng - English
Country	US - United States
Keywords	perovskite cobaltites ; spin state transition ; variable valence ; epitaxial strain ; XANES
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	GA17-04412S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
UT WOS	000397421400039
EID SCOPUS	85016138267
DOI	10.1063/1.4978747
Annotation	We have fabricated (Pr1-yYy)1-xCaxCoO3 (PYCCO) epitaxial films with various thicknesses by pulsed laser deposition on the SrLaAlO4 (SLAO) substrate that applied an in-plane compressive stress to the film, and investigated the temperature dependence of the electrical resistivity, ρ(T), of the films. An anomalous ρ(T) upturn with a broad hysteresis could be clearly observed only for the thinnest film (d = 50 nm), and the ρ(T) anomaly decreased by increasing film thickness, d. The temperature dependence of the X-ray absorption near-edge structure (XANES) spectra at Pr L2-edge was measured for the films, and the valence states of praseodymium (Pr) ion were determined using the analysis of the XANES spectra. As a result, the average valence of the Pr ion in the d = 50 nm film slightly increases with decreasing temperature from the common value of 3.0+ around room temperature to 3.15+ at 8 K.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2018

Number of the records: 1