GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD

Number of the records: 1

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SYSNO	0484348
Title	GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Vyskočil, Jan (FZU-D)_RID Zíková, Markéta (FZU-D)_RID Oswald, Jiří (FZU-D)_{RID, ORCID} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Petříček, Otto (FZU-D)_RID
Source Title	Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8. - : Institute of Physics Publishing
Article number	025502
Document Type	Článek v odborném periodiku
Grant	GP14-21285P GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	GB
Keywords	GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE
Permanent Link	http://hdl.handle.net/11104/0279501

Number of the records: 1