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GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD
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SYSNO ASEP 0484348 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Vyskočil, Jan (FZU-D) RID
Zíková, Markéta (FZU-D) RID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Petříček, Otto (FZU-D) RIDNumber of authors 6 Article number 025502 Source Title Materials Research Express. - : Institute of Physics Publishing
Roč. 4, č. 2 (2017), s. 1-8Number of pages 8 s. Language eng - English Country GB - United Kingdom Keywords GaAsSb ; InAs ; InGaAs ; quantum dot ; solar cells ; MOVPE Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GP14-21285P GA ČR - Czech Science Foundation (CSF) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000415123000002 EID SCOPUS 85014381997 DOI 10.1088/2053-1591/aa598e Annotation Type-II band alignment offers several advantages for proposed intermediate band solar cell structures. We focused on the quantum dot (QD) solar cell structures based on type-II InAs/GaAs QD layers capped with GaAsSb strain reducing layers. The GaAsSb strain reducing layers were prepared with or without graded Sb concentration. Strong enhancement of photocurrent was achieved by adding an InGaAs buffer layer under the type-II QD structure, thanks to improved electron extraction from QDs. For comparison, a structure with GaAs-capped InAs QDs was prepared, too. Properties of all structures are compared and the mechanism of carrier extraction or relaxation is discussed. Gradient of antimony concentration in a strain reducing layer (SRL) significantly improved resulting properties of solar cell structures. It is shown that in a multiple-QD structure with a GaAsSb SRL, electrons and holes have non-intersecting trajectories which prevents carrier recombination and improves the efficiency of solar cell structures. NextNano band structure calculations of different types of structures support our experimental results. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
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