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GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD
- 1.Hospodková, Alice - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD.
Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. E-ISSN 2053-1591
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.151, year: 2017
http://hdl.handle.net/11104/0279501
Number of the records: 1