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Profilometry with sub-nanometre precision by Raman spectroscopy
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SYSNO ASEP 0479964 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Profilometry with sub-nanometre precision by Raman spectroscopy Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
Hájková, Zdeňka (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Tomasi, A. (CH)
Paviet-Salomon, B. (CH)
Despeisse, M. (CH)
Řáhová, Jaroslava (UFCH-W)
Frank, O. (CZ)
De Wolf, S. (SA)
Ballif, C. (CH)
Fejfar, Antonín (FZU-D) RID, ORCID, SAINumber of authors 11 Source Title NANOCON 2016. List of Abstracts. - Ostrava : Tanger Ltd., 2016 / Shrbená J. - ISBN 978-80-87294-68-0
S. 56-56Number of pages 1 s. Action NANOCON 2016. International Conference /8./ Event date 19.10.2016 - 21.10.2016 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Keywords Raman spectroscopy ; amorphous silicon thin film ; back-contacted heterojunction solar cells ; graphene ; 2D multilayer materials Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA14-15357S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 ; UFCH-W - RVO:61388955 Annotation Accurate non-destructive method for thickness control is essential for the successful integration of a wide range of ultrathin films in an equally wide variety of electronic devices. Our profilometry method is based on attenuation of the substrate Raman signal by absorption in the overlaying thin film.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
Number of the records: 1