Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

0462410 - ÚFCH JH 2017 RIV GB eng J - Journal Article
da Costa, Sara - Ek Weis, Johan - Frank, Otakar - Fridrichová, Michaela - Kalbáč, Martin
Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene.
2D Materials. Roč. 3, č. 2 (2016), 025022. ISSN 2053-1583. E-ISSN 2053-1583
R&D Projects: GA MŠMT LL1301
Institutional support: RVO:61388955
Keywords : graphene bilayer * Raman spectroscopy * isotope labeling
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 6.937, year: 2016

In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D') are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D' Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.
Permanent Link: http://hdl.handle.net/11104/0261875