Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

0435666 - FZÚ 2015 RIV RU eng J - Journal Article
Bagraev, N.T. - Gets, D.S. - Kalabukhova, E.N. - Klyachkin, L.E. - Malyarenko, A.M. - Mashkov, V.A. - Savchenko, Dariia - Shanina, B.D.
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures.
Semiconductors. Roč. 48, č. 11 (2014), s. 1467-1480. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT(CZ) LM2011029
Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132
Institutional support: RVO:68378271
Keywords : electron paramagnetic resonance * electrically- detected electron paramagnetic resonance * 6H -SiC nanostructures * nitrogen-vacancy defect * point defect
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.739, year: 2014

The results of investigation of electrically detected electron paramagnetic resonance (EDEPR) and classical electron paramagnetic resonance (EPR) (X band) for the identification of shallow and deep boron centers, NVSi defects, and isolated silicon vacancies (VSi), which are formed directly during the prep aration of planar nanostructures under conditions of silicon vacancy injection at the SiO2/n 6H SiC inter face without any subsequent irradiation, are presented. The prepared sandwich nanostructures are an ultra narrow p type quantum well, confined by δ barriers heavily doped with boron on an n 6H SiC surface, which are self ordered during pyrolytic oxide deposition and subsequent short time boron diffusion. The EDEPR data of point centers in sandwich nanostructures, prepared within the framework of Hall geometry, are recorded by measuring the field dependences of the magnetoresistance without an external cavity, microwave source and detector.
Permanent Link: http://hdl.handle.net/11104/0239487