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Anisotropic magnetoresistance in an antiferromagnetic semiconductor
- 1.0434414 - FZÚ 2015 RIV GB eng J - Journal Article
Fina, I. - Martí, Xavier - Yi, D. - Liu, J. - Chu, J.-H. - Rayan-Serrao, C. - Suresha, S. - Shick, Alexander - Železný, Jakub - Jungwirth, Tomáš - Fontcuberta, J. - Ramesh, R.
Anisotropic magnetoresistance in an antiferromagnetic semiconductor.
Nature Communications. Roč. 5, SEP (2014), "4671-1"-"4671-7". E-ISSN 2041-1723
R&D Projects: GA MŠMT(CZ) LM2011026; GA ČR GB14-37427G; GA ČR(CZ) GAP204/10/0330
EU Projects: European Commission(XE) 268066 - 0MSPIN
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional support: RVO:68378271
Keywords : antiferromagnets * semiconductors * spintronics
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 11.470, year: 2014
We observe the ohmic anisotropic magnetoresistance effect in a nano-scale film of an antiferromagnetic semiconductor Sr2IrO4. Our work opens the recently proposed path for integrating semiconducting and spintronic technologies in antiferromagnets.
Permanent Link: http://hdl.handle.net/11104/0238459
Number of the records: 1