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ZnO thin films prepared by surfatron produced discharge
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SYSNO ASEP 0430438 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title ZnO thin films prepared by surfatron produced discharge Author(s) Olejníček, Jiří (FZU-D) RID, ORCID
Šmíd, Jiří (FZU-D)
Čada, Martin (FZU-D) RID, ORCID, SAI
Kment, Š. (CZ)
Churpita, Olexandr (FZU-D) RID, ORCID
Kšírová, Petra (FZU-D) RID, ORCID
Brunclíková, Michaela (FZU-D) RID
Adámek, Petr (FZU-D) RID, ORCID
Kohout, Michal (FZU-D) RID, ORCID
Valvoda, V. (CZ)
Chvostová, Dagmar (FZU-D) RID, SAI, ORCID
Zlámal, M. (CZ)
Hubička, Zdeněk (FZU-D) RID, ORCID, SAISource Title Catalysis Today. - : Elsevier - ISSN 0920-5861
Roč. 230, Jul (2014), s. 119-124Number of pages 6 s. Language eng - English Country NL - Netherlands Keywords ZnO ; surfatron ; thin films ; Langmuir probe ; plasma density Subject RIV BL - Plasma and Gas Discharge Physics R&D Projects TA01011740 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) LH12045 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GAP108/12/1941 GA ČR - Czech Science Foundation (CSF) GAP205/11/0386 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000333800300020 EID SCOPUS 84897582825 DOI 10.1016/j.cattod.2013.11.024 Annotation Multi plasma jet system with 4 independent nozzles working on the principle of surface-wave discharge (SWD) has been developed. The system was optimized and used for plasma-enhanced chemical vapor deposition (PECVD) of nominally pure and Al and Mn doped ZnO thin films. The surfatron source was powered by a microwave magnetron generator working at a frequency of 2.45 GHz with the output power of 300 W per surfatron. The time-resolved properties of low-pressure plasma jet working under deposition conditions in pulse mode were studied using Langmuir probe. It was found that the plasma density inside the active plasma jet is about 1017 m-3 and electron effective temperature can reach approximately 3 eV. The set of ZnO samples with a thickness of 300 nm were prepared on Si, ITO and quartz substrate and were analyzed by XRD, SEM, EDX, UV-light amperometry and optical ellipsometry. All samples under study were crystalline in nature, revealed n-type conductivity. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2015
Number of the records: 1