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Growth and characterization of GaN:Mn layers by MOVPE
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SYSNO ASEP 0322599 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Growth and characterization of GaN:Mn layers by MOVPE Title Růst a charakterizace vrstev GaN:Mn pomocí MOVPE Author(s) Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Stejskal, J. (CZ)
Hejtmánek, J. (CZ)
Marygsko, M. (CZ)
Jurek, K. (CZ)
Václavů, M. (CZ)
Havránek, Vladimír (UJF-V) RID, SAI, ORCID
Macková, Anna (UJF-V) RID, ORCID, SAISource Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 310, č. 23 (2008), s. 5025-5027Number of pages 3 s. Action 14th International Conference on Metal Organic Vapor Phase Epitaxy Event date 01.06.2008-06.06.2008 VEvent location Metz Country FR - France Event type WRD Language eng - English Country NL - Netherlands Keywords Metalorganic vapor-phase epitaxy ; Nitrides ; Magnetic materials Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders CEZ AV0Z10480505 - UJF-V (2005-2011) UT WOS 000262019400077 DOI 10.1016/j.jcrysgro.2008.07.103 Annotation In this paper we present a growth of Ga1-xMnxN layers by metalorganic vapor-phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1-xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 degrees C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2009
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