Number of the records: 1
Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
- 1.0101846 - UJF-V 20043013 DE eng A - Abstract
Peřina, Vratislav - Macková, Anna - Hnatowicz, Vladimír - Prajzler, V. - Machovič, V. - Matějka, P. - Schröfel, J.
Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium.
European Conference on Applications of Surface and Interface Analysis, ECASIA´03 /10th/. Berlín: Unger, W. Tetzko, I. Gross, Th., 2003. s. 195.
[European Conference on Applications of Surface and Interface Analysis, ECASIA´03 /10th/. 05.10.2003-10.10.2003, Berlín]
R&D Projects: GA AV ČR KSK1010104
Institutional research plan: CEZ:AV0Z1048901
Keywords : shell-model analysis * light nuclei
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Permanent Link: http://hdl.handle.net/11104/0009237
Number of the records: 1