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Vapour pressure and heat capacities of metal organic precursors, Y(thd).sub.3./sub. and Zr(thd).sub.4./sub
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SYSNO ASEP 0100075 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Vapour pressure and heat capacities of metal organic precursors, Y(thd)3 and Zr(thd)4./sub Title Tlak nasycených par a měrná teplota organometalických prekurzorů Y(thd)3 and Zr(thd)4./sub Author(s) Fulem, Michal (FZU-D) RID, ORCID
Růžička, K. (CZ)
Růžička, V. (CZ)
Šimeček, Tomislav (FZU-D)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAISource Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 264, - (2004), s. 192-200Number of pages 9 s. Language eng - English Country NL - Netherlands Keywords static method ; vapour pressure ; metalorganic chemical vapor deposition ; Y and Zr precursors ; .alpha.-diketonate complexes Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Annotation The vapour pressure of two metal organic precursors, Y(thd)3 and Zr(thd)4 used for metal organic chemical vapour deposition of high-temperature superconductor layers, was measured. The experimental data were fitted and represent updated values of the present day high-purity materials providing comparison with the previously published data Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2005
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