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Highly Efficient Bulk-Crystal-Sized Exfoliation of 2D Materials under Ultrahigh Vacuum

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    SYSNO ASEP0585020
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleHighly Efficient Bulk-Crystal-Sized Exfoliation of 2D Materials under Ultrahigh Vacuum
    Author(s) Haider, Golam (UFCH-W) ORCID, RID
    Gastaldo, Michele (UFCH-W)
    Karim, Bazlul (UFCH-W)
    Plšek, Jan (UFCH-W) RID, ORCID
    Varade, V. (CZ)
    Volochanskyi, Oleksandr (UFCH-W) ORCID, SAI
    Vejpravová, J. (CZ)
    Kalbáč, Martin (UFCH-W) RID, ORCID
    Source TitleACS Applied Electronic Materials. - : American Chemical Society
    (2024)
    Number of pages8 s.
    Languageeng - English
    CountryUS - United States
    Keywordsraman-scattering ; shear ; ultrahigh vacuum exfoliation ; noble metals ; large-area monolayers ; interfacial interaction ; Raman spectroscopy
    Subject RIVCF - Physical ; Theoretical Chemistry
    OECD categoryPhysical chemistry
    R&D ProjectsGX20-08633X GA ČR - Czech Science Foundation (CSF)
    Method of publishingOpen access
    Institutional supportUFCH-W - RVO:61388955
    UT WOS001192441900001
    EID SCOPUS85189083161
    DOI10.1021/acsaelm.3c01824
    AnnotationIn the realm of materials science and nanotechnology, the pursuit of the scalable preparation of high-quality monolayers of two-dimensional (2D) materials is a significant challenge. Despite the widespread interest sparked by the unique quantum mechanical effects in these materials, achieving scalable and controlled syntheses remains hindered by a lack of suitable techniques. This work presents a facile exfoliation approach that successfully yields bulk-crystal-sized 2D monolayers, approaching 100% under ultrahigh vacuum (UHV) conditions. The process was demonstrated by exfoliating MoS2 on Au and Ag substrates. Raman spectroscopy reveals a strong dispersive interaction at the metal/MoS2 interface, inducing a high strain field on the topmost layer of the bulk crystal. This strain field's inhomogeneous distribution reduces interlayer van der Waals interactions, enhancing the selectivity of monolayer exfoliation. Beyond scalable exfoliation, our method opens avenues for obtaining monolayers of materials unstable under ambient conditions, emphasizing its broader applicability in advancing the synthesis of 2D materials for diverse applications.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2025
    Electronic addresshttps://pubs.acs.org/doi/10.1021/acsaelm.3c01824?src=getftr
Number of the records: 1  

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