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Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures
- 1.0571963 - FZÚ 2024 RIV CH eng J - Journal Article
Bulgakov, Alexander - Beránek, Jiří - Volodin, V.A. - Cheng, Y. - Levy, Yoann - Nagisetty, S.S. - Zukerstein, Martin - Popov, A. A. - Bulgakova, Nadezhda M.
Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures.
Materials. Roč. 16, č. 9 (2023), č. článku 3572. E-ISSN 1996-1944
R&D Projects: GA MŠMT EF15_003/0000445
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institutional support: RVO:68378271
Keywords : silicon–germanium multilayer structures * thin films * ultrashort infrared laser annealing * selective crystallization * defect accumulation * Raman spectroscopy
OECD category: Optics (including laser optics and quantum optics)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0342818File Download Size Commentary Version Access 0571963.pdf 0 11.6 MB CC licence Publisher’s postprint open-access
Number of the records: 1