Optical properties of epitaxially grown GaN:Ge thin films

0564769 - FZÚ 2023 RIV NL eng J - Journal Article
Buryi, Maksym - Babin, Vladimir - Hubáček, Tomáš - Jarý, Vítězslav - Hájek, František - Kuldová, Karla - Remeš, Zdeněk - Hospodková, Alice
Optical properties of epitaxially grown GaN:Ge thin films.
Optical Materials: X. Roč. 16, Oct. (2022), č. článku 100211. ISSN 2590-1478
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GJ20-05497Y
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : GaN * thin films * Ge doping * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Method of publishing: Open access

To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted. This study includes the measurements of radioluminescence and photoluminescence spectra, thermally stimulated luminescence as well as scintillation decay kinetics. The representative radio- and photoluminescence spectra are composed of two bands. The narrow and fast band peaking at about 3.4 eV is ascribed to excitons and the broad and slow defect-related band with the maximum at about 2.2 eV is produced by carbon occupying nitrogen site. It has been found that the decay kinetics and amplitude of the exciton and defect emission are sensitive to the Ge doping level. In particular, the exciton- and the defect-related luminescence become faster with increasing Ge content. Charge trapping processes were also affected by the Ge doping.

Permanent Link: https://hdl.handle.net/11104/0336364