Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier

0554500 - ÚPT 2022 RIV US eng C - Conference Paper (international conference)
Burda, Daniel - Allaham, Mohammad M. - Knápek, Alexandr - Sobola, Dinara - Mousa, M. S. … Total 7 authors
Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier.
International Vacuum Nanoelectronics Conference. In: 2021 34th International Vacuum Nanoelectronics Conference (IVNC). New York: IEEE, 2021 - (Purcell, S.; Mazellier, J.), (2021), s. 178-179. ISBN 978-1-6654-2589-6. ISSN 2380-6311.
[International Vacuum Nanoelectronics Conference (IVNC) /34./. online (FR), 05.07.2021-09.07.2021]
R&D Projects: GA MV(CZ) VI20192022147
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68081731
Keywords : field electron microscopy * electrochemical etching * tungsten single tip field emitter * atomic layer deposition * Al2O3 nanolayer * Murphy-Good plot
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://ieeexplore.ieee.org/document/9600704

This research is aimed towards more in-depth understanding of field emission properties of tungsten single tip field emitters (STFEs) coated with tens of nanometer thin barrier of selected refractory oxides such as Al2O3. Introducing the additional barrier into metal-vacuum interface system of the emitter can be beneficial for an improvement of its performance. The pristine tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barriers were prepared by using low-temperature atomic layer deposition (ALD). Field emission was studied in field emission microscope (FEM) working in UHV vacuum (< 1x10(-7) Pa), experimental field emission data were analyzed by the so-called Murphy-Good plots, revealing the non-orthodox behavior of the prepared emitters.
Permanent Link: http://hdl.handle.net/11104/0329215