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Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC
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SYSNO ASEP 0544608 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC Author(s) Rathore, S. (TW)
Patel, Deepak Kumar (IN)
Thakur, Mukesh Kumar (UFCH-W)
Haider, Golam (UFCH-W) ORCID, RID
Kalbáč, Martin (UFCH-W) RID, ORCID
Kruskopf, M. (DE)
Liu, Ch.-I. (US)
Rigosi, A. F. (US)
Elmquist, R. E. (US)
Liang, Ch.-T. (TW)
Hong, P.-D. (TW)Source Title Carbon. - : Elsevier - ISSN 0008-6223
Roč. 184, OCT 2021 (2021), s. 72-81Number of pages 10 s. Language eng - English Country US - United States Keywords silicon carbide ; epitaxial graphene ; binary response ; broadband photodetector Subject RIV CF - Physical ; Theoretical Chemistry OECD category Physical chemistry R&D Projects GX20-08633X GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support UFCH-W - RVO:61388955 UT WOS 000704334600007 EID SCOPUS 85112361716 DOI 10.1016/j.carbon.2021.07.098 Annotation Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H–SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H–SiC-based device that enables us to observe the positive photoresponse for (405–532) nm and negative photoresponse for (632–980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2022 Electronic address http://hdl.handle.net/11104/0321442
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