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Spin echo studies on Fe.sup.3+./sup. ions in GaN: spin-phonon relaxation and ligand hyperfine interactions
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SYSNO ASEP 0531899 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Spin echo studies on Fe3+ ions in GaN: spin-phonon relaxation and ligand hyperfine interactions Author(s) Azamat, Dmitry (FZU-D) RID, ORCID
Badalyan, A. G. (RU)
Romanov, N.G. (RU)
Savinov, Maxim (FZU-D) RID, ORCID
Hrabovský, M. (CZ)
Jastrabík, Lubomír (FZU-D) RID, ORCID
Dejneka, Alexandr (FZU-D) RID, ORCID
Yakovlev, D.R. (RU)
Bayer, M. (RU)Number of authors 9 Article number 032106 Source Title Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 117, č. 3 (2020), s. 1-6Number of pages 6 s. Language eng - English Country US - United States Keywords electron spin ; Q-band frequency ; GaN crystals ; Fe3+ centers Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000554944000002 EID SCOPUS 85088872560 DOI 10.1063/5.0007477 Annotation The electron spin echo detected inversion recovery technique at the Q-band frequency was used to characterize spin diffusion effects in spin-lattice relaxation of compensating Fe3+ impurities in n-type doped GaN crystals. It was found that the selective saturation can be achieved in the GaN:Fe3+ system due to magnetization transfer based on the spin flip-flop cross-relaxation processes. The temperature dependence of 1/T1 can be explained by direct spin-phonon processes (∼T) below 25 K and by Raman two-phonon processes (∼T9) at higher temperatures. Spin diffusion in this system is characterized by an additional cross-relaxation rate which is weakly temperature-dependent below 25 K. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021 Electronic address https://doi.org/10.1063/5.0007477
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