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Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
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SYSNO ASEP 0522011 Document Type M - Monograph Chapter R&D Document Type Monograph Chapter Title Quantum dots Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RIDNumber of authors 3 Source Title Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications. - Chichester : John Wiley & Sons Ltd., 2019 / Capper P. ; Irvine S. - ISBN 9781119313014 Pages s. 175-216 Number of pages 42 s. Number of pages 584 Publication form Print - P Language eng - English Country GB - United Kingdom Keywords MOVPE ; quantum dots ; growth parameters ; self-assembled Starnski-Krastanov Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 DOI 10.1002/9781119313021.ch6 Annotation This chapter focuses on quantum dots (QDs) embedded inside a semiconductor structure. It talks about metalorganic vapor phase epitaxy (MOVPE) QD preparation only. One can distinguish QD types according to growth modes, growth procedures, materials used, and structures with strain‐reducing layers, types of interfaces, and spatial arrangement of QDs (uncoordinated, array, and single/individual QDs). The three main growth technological procedures used for MOVPE preparation of QDs embedded in the structure are self‐assembled Stranski–Krastanov (SK) growth mode, formation of QDs in prepatterned inverted pyramids, and droplet epitaxy. The most widely used procedure is self‐assembling of QDs in SK growth mode. MOVPE growth parameters such as growth temperature, material type of precursors, reactor pressure, precursor flow ratio, total pressure and flow, complex purity of materials, precursors, and reactor setup can strongly influence the structure and device parameters, as well.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020
Number of the records: 1