Number of the records: 1
Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions
- 1.
SYSNO ASEP 0496726 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions Author(s) Mikšová, Romana (UJF-V) RID, ORCID, SAI
Macková, Anna (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Yatskiv, Roman (URE-Y) RID, ORCIDNumber of authors 4 Source Title Surface and Interface Analysis. - : Wiley - ISSN 0142-2421
Roč. 50, č. 11 (2018), s. 1243-1249Number of pages 7 s. Publication form Print - P Action 17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017) Event date 24.09.2017 - 29.09.2017 VEvent location Monpellier Country FR - France Event type EUR Language eng - English Country US - United States Keywords ion irradiation of crystals ; MC modelling of ion channeling ; RBS channeling ; SOI material Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Nuclear physics Subject RIV - cooperation Institute of Radio Engineering and Electronics - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA15-01602S GA ČR - Czech Science Foundation (CSF) EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support UJF-V - RVO:61389005 ; URE-Y - RVO:67985882 UT WOS 000448889600049 EID SCOPUS 85050581054 DOI 10.1002/sia.6492 Annotation Structural modification after medium-heavy ion irradiation was characterised by Rutherford backscattering spectrometry in the channelling mode (RBS-C) for silicon-on-insulator (SOI) material. Silicon on insulator was irradiated using C+, 2(+), N+, 2(+), and O+, 2(+) ions at fluences of 1 x 10(14) and 1 x 10(15) cm(-2) and energies of 0.4, 3, and 5 MeV to follow the interplay of electronic and nuclear stopping and its influence on damage accumulation. The relative amount of displaced atoms in the surface-irradiated layer was extracted from RBS-C spectra and used, along with axial channel analysis, to study ion-channelling effects in the modified crystalline lattice. The discussion of ion penetration through the modified crystalline layer of the SOI structure in channelling direction was supported by a Monte Carlo simulation (FLUX code) of He ion flux maps in a gradually modified Si crystalline upper layer taking into account the experimentally determined relative disorder extracted from RBS-C.
The RBS-C measurement shows an increase of the relative amount of displaced atoms mainly after irradiation using 0.4-MeV ions at an ion fluence of 1 x 10(15) cm(-2). The narrowing effect of channels for He ion-beam channelling experiment was observed in the irradiated silicon layers and discussed in connection with the irradiation parameters. The FLUX simulation, provided with the experimentally given value of the displaced atoms, has confirmed that it is not only the vacancies that can cause such a narrowing effect of the angular scan. The angular scan narrowing can be explained for predominately electronic stopping by induced crystalline-cell modification.Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2019
Number of the records: 1