Diagnostic and characterization of the VCSEL diodes based on W heterostructure type II on GaSb substrate

0372993 - FZÚ 2012 CN eng C - Conference Paper (international conference)
Matulková, Irena - Cihelka, Jaroslav - Zelinger, Zdeněk - Civiš, Martin - Šimeček, Tomislav - Vyskočil, Jan - Hulicius, Eduard
Diagnostic and characterization of the VCSEL diodes based on W heterostructure type II on GaSb substrate.
Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X). Shanghai: Shanghai Institute of Microsystem and Information technology Chinese Academy of Sciences, 2010, s. 178-179. ISBN N.
[International Conference on Mid-Infrared Optoelectronics: Materials and Devices /10./ (MIOMD-X). Shanghai (CN), 05.09.2010-09.09.2010]
Institutional research plan: CEZ:AV0Z40400503; CEZ:AV0Z10100521
Keywords : VCSEL diodes * GaSb * semiconductor laser * MID-IR
Subject RIV: CF - Physical ; Theoretical Chemistry

Vertical-Cavity Surface-Emitting Laser (VCSEL) diodes are among the youngest members of the semiconductor laser diode family. The aim of our work focuses on the measurement of the properties (the spectral range of the laser emission, temperature and current tunability) of experimental VCSEL diode lasers based on GaSb operating in the infrared region around 4250cm-1 . A high-resolution spectrometry was used for the laserdiagnostic research. The absobtion spectra of atmospheric pollutants like CH4, CO and ammonia have been measured using these VCSELs for the first time.
Permanent Link: http://hdl.handle.net/11104/0206174